NANO PRO™ 4 inch Undoped 3C-SiC Epitaxial Wafer on Silicon, Epi Thickness: 300nm
3C-SiC belongs to the wide band gap semiconductor. Despite different polytypes, it has similar superior properties over traditional materials. It offers high resistance and semi insulating properties. During epitaxial growth, high concentration of electrically active dopants can be introduced into the 3C-SiC epitaxial layers, which helps avoid unnecessary ion implantation steps in device fabrication. The advantages of such wafer are reduced thermal stresses, compatibility with silicon technology, and comparable low cost. One of the applications of this epitaxial wafer is acting as the template for Gallium Nitride (GaN) growth, including hexagonal GaN and cubic GaN. The SiC layer on the silicon substrate can reduced the lattice spacing to about 4% mismatch to GaN (typically 17% for silicon and 14% for sapphire), which results in fewer crystal defects and further increases the performance of the devices. Since 3C-SiC is able to withstand high temperatures and corrosive chemicals, it is often used as a sensing devices that can operate in harsh environment. It can also be used for electronics, biomedical and clean energy applications.
NANOSSR offers epitaxy services on various substrate. Please contact us if you need customization or bulk order.
SKU# WA3001
Specification:
| Substrate | Silicon Wafer |
| Diameter | 100±0.2 mm |
| Grade | Prime |
| Growth Method | CZ |
| Orientation | |
| Thickness | 525±25 um |
| Resistivity | 1~100 ohm.cm |
| Type/Dopant | P-type/Boron |
| Epi Layer | 3C-SiC |
| Epi Layer Thickness | 300±30 nm |
| Epi Layer Type | Undoped |
*Please note that actual products might be different from the picture below.
References:
Customization:
NANOSSR offers 3C-SiC epitaxy services on various substrate as well, including SOI wafer and patterned substrate. We can also provide 4H-SiC homoepitaxial wafers. Please contact us if you need customized specification.
